advanced power n-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss 60v single drive requirement r ds(on) 36m surface mount package i d 25a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value unit rthj-c maximum thermal resistance, junction-case 3.2 /w rthj-a 62.5 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data and specifications subject to change without notice halogen-free product 1 ap9971gh/j-hf 200904013 maximum thermal resistance, junction-ambient (pcb mount) 3 parameter rating drain-source voltage 60 gate-source voltage + 20 continuous drain current, v gs @ 10v 25 continuous drain current, v gs @ 10v 16 pulsed drain current 1 80 total power dissipation 39 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.31 thermal data parameter storage temperature range advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- effectiveness. g d s the to-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (ap9971gj) are available for low-profile applications. g d s to-251(j) g d s to-252(h)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 60 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =18a - - 36 m ? ?
a p9971gh/j-hf fig 1. typical output characteristics fig 2. typical output characteristics ??? t rr q rr fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 25 30 35 40 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =18a t c =25 o c 0 20 40 60 80 100 012345 v ds , drain-to-source voltage (v) i d , drain current (a) v g =3.0v t c =25 o c 10v 7.0v 5.0v 4.5v 0 10 20 30 40 50 60 70 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c v g =3.0v 10v 7.0v 5.0v 4.5v 0.0 0.5 1.0 1.5 2.0 2.5 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) v g =10v i d =18a 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.6 1 1.4 1.8 2.2 2.6 -50 0 50 100 150 t j ,junction temperature ( o c) v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics ??? t rr q rr fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 ap9971gh/j-hf 10 100 1000 10000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c rss c oss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.0 2 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 10us 100us 1ms 10ms 100ms dc 0 2 4 6 8 10 12 14 0 10203040 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =30v v ds =38v v ds =48v i d =18a
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